Lattice Defects in High Resistivity Silicon

Lattice Defects in High Resistivity Silicon

Author(s):

Publication title:

Proceedings of the Fourth International Symposium on High Purity Silicon

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

96-13

Pub. Year:

1996

Page(from):

305

Page(to):

324

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771566 [1566771560]

Language:

English

Call no.:

E23400/963433

Type:

Conference Proceedings

Details

TDL ID:	ZA00013846
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on High Purity Silicon ; Meeting of the Elecrochemical Society
Conf. info. (Number):	4th ; 190h
Conf. info. (Venue):	San Antonio, Texas, USA
Conf. info. (Date):	1996.10.06-1996.10.11

Similar Items:

1 Conference Proceedings On the Recombination Activity of Oxygen Precipitation Related Lattice Defects in Silicon Vanhellemont, J., Kaniava, A., Libezny, M., Simoen, E., Kissinger, G., Gaubas, E., Claeys, C., Clauws, P. MRS - Materials Research Society	7 Conference Proceedings THE ROLE OF POINT DEFECTS IN THE NUCLEATION OF FILM EDGE INDUCED DISLOCATIONS IN SILICON. VANHELLEMONT,J., CLAEYS,C., LANDUYT,J.VAN Trans Tech Publications
2 Conference Proceedings The Impact of Processing-Induced Defects on the Electrical Characteristics and the Degradation of Si n+p Junctions Simoen, E., Vanhellemont, J., Kaniava, A., Claeys, C. Electrochemical Society	8 Conference Proceedings Lattice Defects in High Quality As-Grown CZ Silicon,Studied with Light Scattering and Preferential Etching Techniques Vanhellemont,J., Kissinger,G., Graf,D., Kenis,K., Depas,M., Mertens,P., Lambert,U., Heyns,M., Claeys,C., Richter,H., … Trans Tech Publications
3 Conference Proceedings Proton irradiation induced lattice defects in Si diodes and their effects on device performance Ohyama, H., Simoen, E., Claeys, C., Vanhellemont, J., Takami, Y., Hayama, T., Sunaga, H., Kobayashi, K. Electrochemical Society	9 Conference Proceedings The effect of substrate radiation-induced defects on the operation of deep submicron silicon technologies Simoen, E., Claeys, C., Poyai, A. Electrochemical Society
4 Conference Proceedings ON THE ELECTRICAL ACTIVITY OF OXYGEN-RELATED EXTENDED DEFECTS IN SILICON Vanhellemont, J., Simoen, E., Bosman, G., Claeys, C., Kaniava, A., Gaubas, E., Blondeel, A., Clauws, P. Electrochemical Society	10 Conference Proceedings Defect Engineering in High-Mobility Substrates for Advanced CMOS Technologies (Invited) Claeys, C., Simoen, E. Electrochemical Society
5 Conference Proceedings Irradiation induced lattice defects in In0.53Ga0.47As PIN photodiodes Kudou,T., Ohyama,H., Vanhellemont,J., Simoen,E., Claeys,C., Takami,Y., Fujii,A., Sunaga,H. Trans Tech Publications	11 Conference Proceedings Lattiee defects in Si1-xGex epitaxial diodes induced by 20-MeV alpha rays Ohyama,H., Vanhellemont,J., Simoen,E., Claeys,C., Takami,Y., Hayama,K., Sunaga,H., Poortmans,J., Caymax,M. Trans Tech Publications
6 Conference Proceedings On the Role of Point Defects in Gettering Processes Vanhellemont,J., Claeys,C. Trans Tech Publications	12 Conference Proceedings SUBSTRATE AND PARTICLE DEPENDENT DEEP LEVEL GENERATION IN SILICON BY MeV PARTICLE BEAMS Trauwaert, M.-A., Vanhellemont, J., Simoen, E., Claeys, C., Johlander, B., Harboe-Sorensen, R., Adams, L., Clauws, P. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12