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The Impact of the Dwell Time Above 900℃ During Crystal Growth on the Gate Oxide Integrity of Silicon Wafers

Author(s):
Dornberger, E.
von Ammon, W.
Graef, D.
Lambert, U.
Miller, A.
Oelkrug, H.
Ehlert, A.
2 more
Publication title:
Proceedings of the Fourth International Symposium on High Purity Silicon
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
96-13
Pub. Year:
1996
Page(from):
140
Page(to):
150
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771566 [1566771560]
Language:
English
Call no.:
E23400/963433
Type:
Conference Proceedings

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