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Characterization of PECVD Silicon Carbon Oxynitride - Applica- tion to a-Si:H Thin Film Transistor as a Gate Dielectric Layer

Author(s):
Kuo, Y  
Publication title:
Proceedings of the eleventh International Symposium on Plasma Processing
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
96-12
Pub. Year:
1996
Page(from):
668
Page(to):
674
Pages:
7
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771641 [1566771641]
Language:
English
Call no.:
E23400/962354
Type:
Conference Proceedings

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