The Tuning of Nitride to Oxide Selectivity by Controlling CXHyF Flow, Pressure, and RF Power in the MxP+ Dielectric Etcher

The Tuning of Nitride to Oxide Selectivity by Controlling CXHyF Flow, Pressure, and RF Power in the MxP+ Dielectric Etcher

Author(s):

Li, Z.

Publication title:

Proceedings of the eleventh International Symposium on Plasma Processing

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

96-12

Pub. Year:

1996

Page(from):

499

Page(to):

504

Pages:

6

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771641 [1566771641]

Language:

English

Call no.:

E23400/962354

Type:

Conference Proceedings

Details

TDL ID:	ZA00013845
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Plasma Processing ; Meeting of the Electrochemical Society
Conf. info. (Number):	11th ; 189th
Conf. info. (Venue):	Los Angels, CA, USA
Conf. info. (Date):	1996.05.05-1996.05.10

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