Blank Cover Image

Role of Dose, Dose Rate, and Anneal Temperature on End-of-Range Dislocation Loops

Author(s):
Publication title:
Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
96-4
Pub. Year:
1996
Page(from):
379
Page(to):
386
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771542 [1566771544]
Language:
English
Call no.:
E23400/961823
Type:
Conference Proceedings

Similar Items:

Colombeau, B., Cristiano, F., Marrot, J.-C., Assayag, G. Ben, Claverie, A.

Materials Research Society

Herner, S. B., Krishnamoorthy, V., Robinson, H. G., Jones, K. S.

MRS - Materials Research Society

Bourdelle, K.K., Fiory, A.T., Gossmann, H.-J. L., McCoy, S.P.

Materials Research Society

JONES,K.S., PRUSSIN,S., WEBER,E.R.

Trans Tech Publications

B. Chen, J. Luo, Q. Yuan, D.F. Zhang, G.Z. Quan

Trans Tech Publications

P.F. Bariani, S. Bruschi, A. Ghiotti, F. Michieletto

Trans Tech Publications

Tsamis, C., Skarlatos, D., Raptis, I., Tsoukalas, D., Calvo, P., Colombeau, B., Cristiano, F., Claverie, A.

Materials Research Society

Williams, J.S., Pogany, A.P., Beanland, D.G., Chivers, D.J., Kenny, M.J., Rose, A., Scott, M.D.

North Holland

Easthope,P.F.

SPIE - The International Society for Optical Engineering

Bross, S., Hahner, P.

Kluwer Academic Publishers

Zhu, G.Z., Chen, P.F., Zhou, Z.Y., Huang, W.L.

SPIE-The International Society for Optical Engineering

1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12