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The Effect of TiSi2 Film Thickness and Growth on the Point Defect Perturbance in Si

Author(s):
Hemer, S.B.
Jones, K.S.
Gossman, H.-J.
Tung, R.T.
Poate, J.M.
Luftman, H.S.
1 more
Publication title:
Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
96-4
Pub. Year:
1996
Page(from):
337
Page(to):
347
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771542 [1566771544]
Language:
English
Call no.:
E23400/961823
Type:
Conference Proceedings

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