Modeling the Transient Diffusion Behavior of Beryllium in Gallium Arsenide and the Effect of Encapsulant Material on Non-Equilibrium Point Defect Populations
- Author(s):
- Publication title:
- Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology
- Title of ser.:
- Electrochemical Society Proceedings Series
- Ser. no.:
- 96-4
- Pub. Year:
- 1996
- Page(from):
- 142
- Page(to):
- 148
- Pub. info.:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566771542 [1566771544]
- Language:
- English
- Call no.:
- E23400/961823
- Type:
- Conference Proceedings
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