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Evidence of Two Sources of Interstitials for TED in Boron Implanted Silicon

Author(s):
Publication title:
Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
96-4
Pub. Year:
1996
Page(from):
116
Page(to):
126
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771542 [1566771544]
Language:
English
Call no.:
E23400/961823
Type:
Conference Proceedings

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