Blank Cover Image

Models and Parameters for the Coupled Diffusion of Dopants and Point Defects in Silicon

Author(s):
Publication title:
Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
96-4
Pub. date:
1996
Page(from):
27
Page(to):
36
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771542 [1566771544]
Language:
English
Call no.:
E23400/961823
Type:
Conference Proceedings

Similar Items:

Dunham, S. T., Wittel, F.

Electrochemical Society

Banerice, S., Dunham, S.T.

Electrochemical Society

Dunham, S.T.

Electrochemical Society

8 Conference Proceedings DOPANT DIFFUSION IN POLYSILLCON

Matsuoka, M.A., Dunham, S.T.

Electrochemical Society

Agarwal, A.M., Dunham, S.T.

Electrochemical Society

Gencer, A.H., Dunham, S.T.

Electrochemical Society

Dunham, S.T.

Electrochemical Society

Meyer, Heidi, Dunham, Scott T.

Materials Research Society

Clejan, I., Dunham, S.T.

Electrochemical Society

Banerjee, S., Dunham, S. T.

Electrochemical Society

Clejan, I., Dunham, S.T.

Electrochemical Society

Dunham, S.T., Agarwal, A.M.

Electrochemical Society

1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12