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Low Damage And Selective Etching of GaAs Using BCl3/SF6 Gas in ECR Plasma

Author(s):
Publication title:
Proceedings of the Twenty-fourth State-of-the-Art Program on Compound Semiconductors
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
96-2
Pub. Year:
1996
Page(from):
246
Page(to):
252
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771528 [1566771528]
Language:
English
Call no.:
E23400/962066
Type:
Conference Proceedings

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