High Microwave Power ECR Etching of III-V Semiconductors in CH4/H2/Ar
- Author(s):
Lee, J.W. Pearton, S.J. Lambers, E.S. Mileham, J.R. Abernathy, C.R. Hobson, W.S. Ren, F. Shul, R.J. - Publication title:
- Proceedings of the Twenty-fourth State-of-the-Art Program on Compound Semiconductors
- Title of ser.:
- Electrochemical Society Proceedings Series
- Ser. no.:
- 96-2
- Pub. Year:
- 1996
- Page(from):
- 203
- Page(to):
- 213
- Pub. info.:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566771528 [1566771528]
- Language:
- English
- Call no.:
- E23400/962066
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Fabrication of Novel III-N and III-V Modulator Structures by ECR Plasma Etching
MRS - Materials Research Society |
Electrochemical Society |
Materials Research Society |
8
Conference Proceedings
COMPARISON OF MULTIPOLAR RESONANT-CAVITY AND MAGNETIC MIRROR MICROWAVE ECR SOURCES FOR DRY ETCHING OF III-V SEMICONDUCTORS
MRS - Materials Research Society |
Materials Research Society |
MRS - Materials Research Society |
Electrochemical Society |
10
Conference Proceedings
Extremely High Etching Rate of In-Based III-V Semiconductors in BCl3/N2 Based Plasma
Electrochemical Society |
5
Conference Proceedings
Selective dry etching of the GaN/InN/AlN, GaAs/AlGaAs and GaAs/InGaP systems
Materials Research Society |
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |