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Ultrathin Oxide Reliability: Effects of Gate Doping Concentration and Poly- Si/SiO2 Interface Stress Relaxation

Author(s):
Wristers, D.
Wang, H.H.
Han, L.K.
Lin, C.
Chen, T.S.
Kwong, D.L.
Fulford, J.
2 more
Publication title:
The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
96-1
Pub. date:
1996
Page(from):
733
Page(to):
743
Pages:
11
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771511 [156677151X]
Language:
English
Call no.:
E23400/962115
Type:
Conference Proceedings

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