Hot-Carrier Properties of Sub-Micron MOSFETs with NO-Annealed Gate Oxides
- Author(s):
- Publication title:
- The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface
- Title of ser.:
- Electrochemical Society Proceedings Series
- Ser. no.:
- 96-1
- Pub. Year:
- 1996
- Page(from):
- 687
- Page(to):
- 694
- Pages:
- 8
- Pub. info.:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566771511 [156677151X]
- Language:
- English
- Call no.:
- E23400/962115
- Type:
- Conference Proceedings
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