Blank Cover Image

On the Improving of the Gate Oxide Reliability

Author(s):
Publication title:
The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
96-1
Pub. Year:
1996
Page(from):
635
Page(to):
644
Pages:
10
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771511 [156677151X]
Language:
English
Call no.:
E23400/962115
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Gate oxide quality improvement nearby bird's beak region

Bellutti, P., Collini, A., Ferrario, L., Zorzi, N, Zen, M.

Electrochemical Society
7 Conference Proceedings Effect of Interface Stress on Reliability of Gate Oxide

Yang, T.C., Bhat, N., Saraswat, K.C.

Electrochemical Society
2 Conference Proceedings Surface and Bulk Properties of Oxygenated FZ Silicon Wafers for Particle Detector Applications

Bellutti, P., Boscardin, M., Betta, G.-F.Dalla, Ferrario, L., Gregori, P., Zorzi, N.

Electrochemical Society
8 Conference Proceedings Influence of the Oxidation Temperature and Atmosphere on the Reliability of Thick Gate Oxides on the 4H-SiC C(000-1) Face

M. Grieb, D. Peters, A.J. Bauer, P. Friedrichs, H. Ryssel

Trans Tech Publications
3 Conference Proceedings Surface and Bulk Properties of Oxygenated FZ Silicon Wafers for Particle Detector Applications

Bellutti,P., Boscardin,M., Betta,G.-F.Dalla, Ferrario,L., Gregori,P., Zorzi,N.

Electrochemical Society, SPIE-The International Society for Optical Engineering
9 Conference Proceedings TDDB Reliability Assessment and Burn-in for Thin Gate Oxides

Anderson, S., Moosa, M., Fowler, T., Kawasaki, H.

Electrochemical Society
4 Conference Proceedings MOS C-t characteristics and gate oxide quality versus bulk iron contamination in epitaxial wafers

Bellutti, P., Collini, A., Zorzi, N., Vaccari, G., Crippa, D.

Electrochemical Society
10 Conference Proceedings Gate-Area Dependence of SiC Thermal Oxides Reliability

J. Senzaki, A. Shimozato, M. Okamoto, K. Kojima, K. Fukuda

Trans Tech Publications
5 Conference Proceedings Interstitial Oxygen Concentration Role in the DW-LOCOS CMOS Technology

Bellutti, P., Boscardin, M., Zen, M., Zordi, N., Vrtacnik, D., Calderara, M., Soncini, G.

Electrochemical Society
11 Conference Proceedings Performance and Reliability of Scaled Gate Dielectrics

Paulson, W. M., Tobin, P. J., Tseng, H-H., Maiti, B., Gelatos, C., Hegde, R. I., Anderson, S. G. H.

MRS - Materials Research Society
6 Conference Proceedings Relationship Between Interfacial Roughness and Dielectric Reliability for Silicon Oxynitride Gate Dielectrics Processed With Nitric Oxide

Sapjeta, J., Green, M. L., Chang, J. P., Silverman, P. J., Sorsch, T. W., Weir, B. E., Gladden, W., Ma, Y., Sung, C. Y., …

MRS - Materials Research Society
12 Conference Proceedings ENHANCED GATE OXIDE RELIABILITY THROUGH FLUORINE INCORPORATION AND THE INFLUENCE OF POLYSILICON PROCESS VARIATIONS

MacWilliams, K. P., Lowry, L. E., Lin, S. T., Song, M., Cole, R., Brown, S.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12