Extraction of the Slow Oxide Trap Concentration Profiles in MOS Transistors Using the Charge Pumping Technique

Extraction of the Slow Oxide Trap Concentration Profiles in MOS Transistors Using the Charge Pumping Technique

Author(s):

Publication title:

The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

96-1

Pub. Year:

1996

Page(from):

547

Page(to):

554

Pages:

8

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771511 [156677151X]

Language:

English

Call no.:

E23400/962115

Type:

Conference Proceedings

Details

TDL ID:	ZA00013835
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface
Conf. info. (Number):	3rd
Conf. info. (Venue):	Los Angeles, CA, USA
Conf. info. (Date):	1996.05.05-1996.05.10

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