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Stress-Induced Positive Charge and Oygen-Vacancy-Related Defects in Hydrogen-Annealed SiO2 Films

Author(s):
Publication title:
The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
96-1
Pub. Year:
1996
Page(from):
538
Page(to):
546
Pages:
9
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771511 [156677151X]
Language:
English
Call no.:
E23400/962115
Type:
Conference Proceedings

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