Boron Diffusion in Ultrathin Silicon Dioxide Layers

Boron Diffusion in Ultrathin Silicon Dioxide Layers

Author(s):: Fair, R.B.
Publication title:: The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface
Title of ser.:: Electrochemical Society Proceedings Series
Ser. no.:: 96-1
Pub. Year:: 1996
Page(from):: 200
Page(to):: 213
Pages:: 14
Pub. info.:: Pennington, NJ: Electrochemical Society
ISSN:: 01616374
ISBN:: 9781566771511 [156677151X]
Language:: English
Call no.:: E23400/962115
Type:: Conference Proceedings

Details

TDL ID:	ZA00013835
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface
Conf. info. (Number):	3rd
Conf. info. (Venue):	Los Angeles, CA, USA
Conf. info. (Date):	1996.05.05-1996.05.10

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