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A Measurement of the Refractive Index of Ultrathin SiO2 Films and a Reevaluation of the Thermal Si Oxidation Kinetics in the Thin Film Regime

Author(s):
Publication title:
The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
96-1
Pub. Year:
1996
Page(from):
81
Page(to):
96
Pages:
16
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771511 [156677151X]
Language:
English
Call no.:
E23400/962115
Type:
Conference Proceedings

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