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EPR Study of the Defects in Porous Si/SiO x N y and Si0.80Ge0.20/SiGeO2

Author(s):
Cantin, J.L.
Schoisswohl, M.
von Bardeleben, H.J.
Morazzani, V.
Ganem, J.-J.
Trimaille, I.
1 more
Publication title:
The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
96-1
Pub. date:
1996
Page(from):
28
Page(to):
45
Pages:
18
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771511 [156677151X]
Language:
English
Call no.:
E23400/962115
Type:
Conference Proceedings

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