Blank Cover Image

Investigation of Wet Chemical Etching of InGaAlP Alloys

Author(s):
Lee, J.W.
Santana, C.J.
Abernathy, C.R.
Pearton, S.J.
Ren, F.
Hobson, W.S.
Lothian, J.R.
Wu, C.S.
3 more
Publication title:
Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII)
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
95-21
Pub. Year:
1995
Page(from):
316
Page(to):
326
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771160 [1566771161]
Language:
English
Call no.:
E23400/961020
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Comparison of ICI and IBr Plasma Chemistries for Etching of InGaAlP Alloys

Hong, J., Lee, J.W, Lambers, E.S., Abernathy, C.R, Pearton, S.J., Constantine, C., Hobson, W.S.

Electrochemical Society
7 Conference Proceedings Cl2-Based ECR Etching of InGaP, AlInP and AlGaP

Hong, J., Lee, J. W., Pearton, S. J., Santana, C., Abernathy, C. R., Hobson, W. S., Ren, F.

MRS - Materials Research Society
2 Conference Proceedings REDUCTION OF SIDEWALL ROUGHNESS DURING DRY ETCHING OF SiO2

Ren, F., Pearton, S.J., Lothian, J.R., Abernathy, C.R., Hobson, W.S.

Materials Research Society
8 Conference Proceedings IODINE-BASED DRY ETCHING CHEMISTRIES FOR InP AND RELATED COMPOUNDS

Pearton, S.J., Chakrabarti, U.K., Katz, A., Abernathy, C.R., Hobson, W.S., Ren, F., Fullowan, T.R.

Materials Research Society
3 Conference Proceedings High Microwave Power ECR Etching of III-V Semiconductors in CH4/H2/Ar

Lee, J.W., Pearton, S.J., Lambers, E.S., Mileham, J.R., Abernathy, C.R., Hobson, W.S., Ren, F., Shul, R.J.

Electrochemical Society
9 Conference Proceedings Electron Cyclotron Resonance Chemical Vapor Deposited Silicon Nitride for T-gate Passivation

Ren, F., LaRoche, J., Anderson, T., Pearton, S.J., Lee, J.W., Johnson, D., Lothian, J.R., Lin, J., Weiner, J.S., Shul, …

Electrochemical Society
4 Conference Proceedings Wet and Dry Etch Selectivity For the GaAs/AlGaAs and GaAs/InGaP Systems

Hays, D., Abernathy, C.R., Pearton, S.J., Ren, F., Hobson, W.S.

Electrochemical Society
10 Conference Proceedings Low temperature SiNx as a sacrificial layer in novel device fabrication

Lothian, J. R., Ren, F., Pearton, S. J., Abernathy, C. R., Tseng, B., Hobson, W. S.

MRS - Materials Research Society
5 Conference Proceedings Extremely High Etching Rate of In-Based III-V Semiconductors in BCl3/N2 Based Plasma

Ren, F., Pearton, S.J., Hobson, W.S., Lothian, J.R., Lopata, J., Cole, M.W., Caballero, J.A.

Electrochemical Society
11 Conference Proceedings DRY SURFACE CLEANING OF PLASMA-ETCHED HEMTs

Pearton, S.J., Ren, F., Katz, A., Chakrabarti, U.K., Lane, E., Hobson, W.S., Kopf, R.F., Abernathy, C.R., Wu, C.S., …

Materials Research Society
6 Conference Proceedings Dry Etching of InGaP and AlInP in CH4/H2/Ar

Lee, J. W., Pearton, S. J., Santana, C. J., Lambers, E. S., Abernathy, C. R., Hobson, W. S., Ren, F.

MRS - Materials Research Society
12 Conference Proceedings Wet and dry etching characteristics of electron beam deposited SiO and SiO2

LaRoche, J.R., Ren, F., Lothian, J.R., Hong, J., Pearton, S.J., Lambers, E.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12