Blank Cover Image

Damage Investigation of GaAs and InGaP Dry Etched with an Electron Cyclotron Resonance Source

Author(s):
Cole, M.W.
Han, W.Y.
Pfeffer, R.L.
Eckart, D.W.
Pang, S.W.
Ko, K.K.
Ren, F.
Hobson, W.S.
Lothian, J.R.
Lopata, J.
Caballero, J.A.
Pearton, S.J.
7 more
Publication title:
Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII)
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
95-21
Pub. Year:
1995
Page(from):
293
Page(to):
306
Pages:
14
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771160 [1566771161]
Language:
English
Call no.:
E23400/961020
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings AFM Analysis of ECR Dry-Etched InGaP, AllnP and AlGaP

Ren, F., Hobson, W. S., Lothian, J. R., Lopata, J., Caballero, J. A., Lee, J. W., Pearton, S. J., Cole, M. W.

MRS - Materials Research Society
7 Conference Proceedings WET AND DRY ETCHING OF InGaP

Lothian, J. R., Kuo, J. M., Pearton, S. J., Ren, F.

Materials Research Society
2 Conference Proceedings Extremely High Etching Rate of In-Based III-V Semiconductors in BCl3/N2 Based Plasma

Ren, F., Pearton, S.J., Hobson, W.S., Lothian, J.R., Lopata, J., Cole, M.W., Caballero, J.A.

Electrochemical Society
8 Conference Proceedings REDUCTION OF SIDEWALL ROUGHNESS DURING DRY ETCHING OF SiO2

Ren, F., Pearton, S.J., Lothian, J.R., Abernathy, C.R., Hobson, W.S.

Materials Research Society
3 Conference Proceedings Wet and Dry Etch Selectivity For the GaAs/AlGaAs and GaAs/InGaP Systems

Hays, D., Abernathy, C.R., Pearton, S.J., Ren, F., Hobson, W.S.

Electrochemical Society
9 Conference Proceedings Damage Introduction in InGaP and AlGaAs by Electron Cyclotron Resonance Ar Plasmas

Lee, J. W., Pearton, S. J., Stradtmann, R. R., Abernathy, C. R., Hobson, W. S., Ren, F.

MRS - Materials Research Society
4 Conference Proceedings A Structural, Chemical and Electrical Investigation of Tungsten Ohmic Contacts to GaN

Cole, M.W., Eckart, D.W., Han, W.Y, Pfeffer, R.L., Monahan, T., Ren, F., Yuan, C., Stall, R.A., Pearton, S.J., Li, Y., …

Electrochemical Society
10 Conference Proceedings Dry Etching of InGaP and AlInP in CH4/H2/Ar

Lee, J. W., Pearton, S. J., Santana, C. J., Lambers, E. S., Abernathy, C. R., Hobson, W. S., Ren, F.

MRS - Materials Research Society
5 Conference Proceedings A Structural and Chemical Investigation of WSi Ohmic Contacts to n+-GaN

Cole, M.W., Eckart, D.W, Han, W.Y., Monahan, T., Ren, F., Pearton, S.J.

Electrochemical Society
11 Conference Proceedings Electrical Characterization and Surface Analysis of Dry Etch Induced Damage on Si after Etching in an Electron Cyclotron Resonance Source

Sung, K. T., Pang, S. W., Cole, M.W., Pearce, N.

Electrochemical Society
6 Conference Proceedings Surface Damage on GaAs Etched Using a Multipolar Electron Cyclotron Resonance Source

Ko, K.K., Pang, S.W.

Electrochemical Society
12 Conference Proceedings NEW DRY-ETCH CHEMISTRIES FOR III-V SEMICONDUCTORS

Pearton, S. J., Chakrabarti, U. K., Ren, F., Abernathy, C. R., Katz, A., Hobson, W. S., Constantine, C.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12