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Theoretical and Experimental Study of the Front and Back Interface Trap Density in Accumulation-Mode SOI MOSFETs

Author(s):
Publication title:
Proceedings of the Symposium on Low Temperature Electronics and High Temperature Superconductivity
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
95-9
Pub. Year:
1995
Page(from):
271
Page(to):
277
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771030 [156677103X]
Language:
English
Call no.:
E23400/952069
Type:
Conference Proceedings

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