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The Use of BESOI as a Compliant Substrate for SiC and GaN Growth

Author(s):
Publication title:
Proceedings of the Third International Symposium on Semiconductor Wafer Bonding : physics and applications
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
95-7
Pub. Year:
1995
Page(from):
561
Page(to):
572
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771016 [1566771013]
Language:
English
Call no.:
E23400/952067
Type:
Conference Proceedings

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