Deep trench isolation in bonded wafer SOI ICs using high density ICP etcher

Deep trench isolation in bonded wafer SOI ICs using high density ICP etcher

Author(s):

Cowen, C S

Publication title:

Proceedings of the Seventh International Symposium on Silicon-on-Insulator Technology and Devices

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

96-3

Pub. Year:

1995

Page(from):

364

Page(to):

374

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771535 [1566771536]

Language:

English

Call no.:

E23400/962142

Type:

Conference Proceedings

Details

TDL ID:	ZA00013813
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Silicon-on-Insulator Technology and Devices ; Electrochemical Society Meeting
Conf. info. (Number):	7th ; 187th
Conf. info. (Venue):	Los Angeles, California, USA
Conf. info. (Date):	1996.05.05-1996.05.10

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