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Reduction of the floating body effects in SOI MOSFETs by Ge ion implantation into source/drain

Author(s):
Yoshimi, M
Nishiyama, A
Arisumi, O
Terauchi, M
Matsuzawa, K
Shigyo, N
1 more
Publication title:
Proceedings of the Seventh International Symposium on Silicon-on-Insulator Technology and Devices
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
96-3
Pub. Year:
1995
Page(from):
231
Page(to):
236
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771535 [1566771536]
Language:
English
Call no.:
E23400/962142
Type:
Conference Proceedings

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