Barrier-Free AuGe-Au Ohmic Contacts for Double Doped AlInAs/GaInAs/InP HEMT Structures
- Author(s):
- Publication title:
- Proceedings of the Symposium on Nondestructive Wafer Characterization for Compound Semiconductor Materials and the twenty-second State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXII)
- Title of ser.:
- Electrochemical Society Proceedings Series
- Ser. no.:
- 95-6
- Pub. Year:
- 1995
- Page(from):
- 287
- Page(to):
- 293
- Pub. info.:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566771009 [1566771005]
- Language:
- English
- Call no.:
- E23400/952066
- Type:
- Conference Proceedings
Similar Items:
SPIE-The International Society for Optical Engineering |
Materials Research Society |
2
Conference Proceedings
THE USE OF LOW TEMPERATURE ALInAs AND GaInAs LATTICE MATCHED TO InP IN THE FABRICATION OF HBTs AND HEMTs
Materials Research Society |
Electrochemical Society |
3
Conference Proceedings
DOPING AND BEYOND: TOWARDS A COMMON MODEL FOR THE OHMIC CONTACT FORMATION MECHANISM IN THE Au/Te/Au/-,AuGe/-, AND
Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
5
Conference Proceedings
GaInAs/GaInP DOUBLE BARRIER STRUCTURES: GROWTH AND APPLICATION IN TUNNELING DIODES
MRS - Materials Research Society |
North-Holland |
6
Conference Proceedings
Surface and subsurface morphology of laser beam annealed AuGe/GaAs ohmic contacts
North Holland |
Materials Research Society |