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Novel GaAsSb/InAlAs Heterostructure Devices Grown by Molecular Beam Epitaxy

Author(s):
Publication title:
Proceedings of the Symposium on Nondestructive Wafer Characterization for Compound Semiconductor Materials and the twenty-second State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXII)
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
95-6
Pub. Year:
1995
Page(from):
181
Page(to):
182
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771009 [1566771005]
Language:
English
Call no.:
E23400/952066
Type:
Conference Proceedings

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