Nondestructive Characterization of n-AlGaAs/GaAs Heterojunction Structures Using Photoellipsometry

Nondestructive Characterization of n-AlGaAs/GaAs Heterojunction Structures Using Photoellipsometry

Author(s):

Publication title:

Proceedings of the Symposium on Nondestructive Wafer Characterization for Compound Semiconductor Materials and the twenty-second State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXII)

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

95-6

Pub. Year:

1995

Page(from):

91

Page(to):

103

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771009 [1566771005]

Language:

English

Call no.:

E23400/952066

Type:

Conference Proceedings

Details

TDL ID:	ZA00013812
Series ID:	PA00000028
Conf. info. (Name):	Symposium on Nondestructive Wafer Characterization for Compound Semiconductor Materials ; State-of-the-Art Program on Compound Semiconductors - SOTAPOCS
Conf. info. (Number):	1995 ; 22nd
Conf. info. (Venue):	Reno, Nevada, USA
Conf. info. (Date):	1995.05.21-1995.05.26

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