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High Quality Oxynitride Gate Dielectrics Prepared by Reoxidation of NH3-Nitrided SiO2 and N2O-Oxide in N2O Ambient

Author(s):
Publication title:
ULSI science and technology, 1995 : proceedings of the Fifth International Symposium on Ultra Large Scale Integration Science and Technology
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
95-5
Pub. date:
1995
Page(from):
485
Page(to):
494
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566770996 [1566770998]
Language:
English
Call no.:
E23400/952065
Type:
Conference Proceedings

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