Blank Cover Image

Formation of High Quality Thin Stacked Oxynitride Gate Dielectrics by In-Situ Rapid Thermal Multiprocessing

Author(s):
Publication title:
ULSI science and technology, 1995 : proceedings of the Fifth International Symposium on Ultra Large Scale Integration Science and Technology
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
95-5
Pub. Year:
1995
Page(from):
472
Page(to):
484
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566770996 [1566770998]
Language:
English
Call no.:
E23400/952065
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Highly reliable CVD-stacked oxynitride gate dielectric fabricated by in-situ rapid thermal multiprocessing

Yan,J., Han,L.K., Kwong,D.-L.

SPIE-The International Society for Optical Engineering
7 Conference Proceedings Formation of High-Quality Oxynitride Gate Dielectrics by High Pressure Thermal Oxidation of Si in NO

Song, S. C., Lee, C. H., Luan, H. F., Kwong, D. L., Gardner, M., Fulford, J., Allen, M., Bloom, J., Evans, R.

MRS - Materials Research Society
2 Conference Proceedings Oxide/nitride stacked layers prepared by in situ rapid-thermal multiprocessing

Wang,H.H., Han,L.K., Yan,J., Kwong,D.-L.

SPIE-The International Society for Optical Engineering
8 Conference Proceedings Ultrathin High-Quality Ta2O5 Gate Dielectrics Prepared by In Situ Rapid Thermal Processing

Luan, H. F., Lee, S. J., Lee, C. H., Mao, A. Y., Vrtis, R., Roberts, D., Kwong, D. L.

MRS - Materials Research Society
3 Conference Proceedings High Quality Oxynitride Gate Dielectrics Prepared by Reoxidation of NH3-Nitrided SiO2 and N2O-Oxide in N2O Ambient

Han, L.K., Kim, J., Wang, H.H., Yan, J., Kwong, D.L.

Electrochemical Society
9 Conference Proceedings Improved hot-carrier reliability of MOSFET analog performance with NO-nitrided SiO2 gate dielectrics

Han,L.K., Kwong,D.

SPIE-The International Society for Optical Engineering
4 Conference Proceedings Recent Developments In Ultrathin Oxynitride And Oxide/Nitride Stacked Films Prepared By In-Situ RTP Multiprocessing

Bhat, M., Yoon, G.W., Kim, J., Han, L,K., Yan, J., Wristers, D., Kwong, D.L.

Electrochemical Society
10 Conference Proceedings Electrical characteristics of n-and p-MOSFETs with N2O-reoxidized NH3-nitrided N2O oxides as gate dielectrics

Han,L.K., Wang,H., Yan,J., Kim,J.H., Yoon,G.W., Kwong,D.-L.

SPIE-The International Society for Optical Engineering
5 Conference Proceedings High Quality Ultrathin Gate Dielectrics Prepared by In-Situ RTP

Han, L. K., Bhat, M., Yan, J., Wristers, D., Kwong, D. L.

MRS - Materials Research Society
11 Conference Proceedings In-situ Rapid Thermal N20 Oxidation of NH3-Nitrided Si for Ultrathin Nitride/Oxide Stack Gate Formation

Kim, Y.H., Song, S.C., Luan, H.F., Gelpey, J.C., Kepton, A., Levy, S., Bloom, R., Kwong, D.-L.

Electrochemical Society
6 Conference Proceedings PERFORMANCE AND REALIABILITY OF ULTATHIN OXYNITRIDE GATE DIELECTRICS PREPARED USING IN-SITU MULTIPLE RAPID THERMAL PROCESSING

Lo, G. Q., Shih, d. K., Ting W., Kwong, D. L.

Materials Research Society
12 Conference Proceedings High-Quality Ultrathin CVD Si3N4 Gate Dielectrics Fabricated by Rapid Thermal Process

Song, S. C., Luan, H. F., Gardner, M., Fulford, J., Allen, M., Kwong, D. L.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12