Laser doping for microelectronics and microtechnology

Laser doping for microelectronics and microtechnology

Author(s):

Sarnet, T. ( IEF, CNRS and Univ. de Paris-Sud (France) )

Kerrien, G. ( IEF, CNRS and Univ. de Paris-Sud (France) )

Yaakoubi, N. ( IEF, CNRS and Univ. de Paris-Sud (France) )

Bosseboeuf, A. ( IEF, CNRS and Univ. de Paris-Sud (France) )

Dufour-Gergam, E. ( IEF, CNRS and Univ. de Paris-Sud (France) )

Debarre, D. ( IEF, CNRS and Univ. de Paris-Sud (France) )

Boulmer, J. ( IEF, CNRS and Univ. de Paris-Sud (France) )

Kakushima, K. ( Univ. of Tokyo (Japan) )

Laviron, C. ( CEA-LETI (France) )

Hernandez, M. ( SOPRA SA (France) )

Venturini, J. ( SOPRA SA (France) )

Bourouina, T. ( ESIEE (France) )

7 more

Publication title:

High-Power Laser Ablation V

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5448

Pub. Year:

2004

Page(from):

669

Page(to):

680

Pages:

12

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819453716 [0819453714]

Language:

English

Call no.:

P63600/5448.1

Type:

Conference Proceedings

Details

TDL ID:	ZA00013800
Series ID:	PA00000029
Conf. info. (Name):	International Symposium on High-Power Laser Ablation
Conf. info. (Number):	2004 : 5th
Conf. info. (Venue):	Taos, NM, USA
Conf. info. (Date):	2004.04.25-2004.04.30

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