Electronic band structure and semimetal-semiconductor transition in InAs/GaSb quantum wells

Electronic band structure and semimetal-semiconductor transition in InAs/GaSb quantum wells

Author(s):

Lapushkin, I. ( Institute of Physics and Technology (Russia) )
Zakharova, A. ( Institute of Physics and Technology (Russia) )
Yen, S.T. ( National Chiao Tung Univ. (Taiwan) )
Chao, K.A. ( Lund Univ. (Sweden) )

Publication title:

Micro- and Nanoelectronics 2003

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5401

Pub. Year:

2004

Page(from):

472

Page(to):

481

Pages:

10

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819453242 [0819453242]

Language:

English

Call no.:

P63600/5401

Type:

Conference Proceedings

Details

TDL ID:	ZA00013753
Series ID:	PA00000029
Conf. info. (Name):	Micro- and Nanoelectronics
Conf. info. (Number):	2003
Conf. info. (Venue):	Zvenigorod, Russia
Conf. info. (Date):	2003.10.06-2003.10.10

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