Gamma radiation tolerance of 0.5-μm SOI MOSFETs

Gamma radiation tolerance of 0.5-μm SOI MOSFETs

Author(s):

Naumova, O.V. ( Institute of Semiconductor Physics (Russia) )
Frantsuzov, A.A. ( Institute of Semiconductor Physics (Russia) )
Popov, V.P. ( Institute of Semiconductor Physics (Russia) )

Publication title:

Micro- and Nanoelectronics 2003

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5401

Pub. Year:

2004

Page(from):

332

Page(to):

336

Pages:

5

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819453242 [0819453242]

Language:

English

Call no.:

P63600/5401

Type:

Conference Proceedings

Details

TDL ID:	ZA00013753
Series ID:	PA00000029
Conf. info. (Name):	Micro- and Nanoelectronics
Conf. info. (Number):	2003
Conf. info. (Venue):	Zvenigorod, Russia
Conf. info. (Date):	2003.10.06-2003.10.10

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