MEV as a new constraint for lithographers in the sub-100-nm regime

MEV as a new constraint for lithographers in the sub-100-nm regime

Author(s):

Trouiller, Y. ( LETI-CEA (France) )

Postnikov, S.V. ( Motorola (France) )

Lucas, K.D. ( Motorola (France) )

Sundermann, F. ( STMicroelectronics (France) )

Patterson, K. ( Motorola (France) )

Belledent, J. ( Philips Semiconductors (France) )

Couderc, C. ( Philips Semiconductors (France) )

Rody, Y.F. ( Philips Semiconductors (France) )

3 more

Publication title:

Optical Microlithography XVII

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5377

Pub. Year:

2004

Page(from):

1081

Page(to):

1092

Pages:

12

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819452900 [0819452904]

Language:

English

Call no.:

P63600/5377.2

Type:

Conference Proceedings

Details

TDL ID:	ZA00013728
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Optical Microlithography
Conf. info. (Number):	2004 : 17th
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	2004.02.24-2004.02.27

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