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Double exposure to reduce overall line-width variation of 80-nm DRAM gate

Author(s):
Ma, W.-K. ( Hynix Semiconductor Inc. (South Korea) )
Lim, C.-M. ( Hynix Semiconductor Inc. (South Korea) )
Oh, S.-Y. ( Hynix Semiconductor Inc. (South Korea) )
Nam, B.-H. ( Hynix Semiconductor Inc. (South Korea) )
Moon, S.-C. ( Hynix Semiconductor Inc. (South Korea) )
Shin, K.S. ( Hynix Semiconductor Inc. (South Korea) )
1 more
Publication title:
Optical Microlithography XVII
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5377
Pub. Year:
2004
Page(from):
939
Page(to):
946
Pages:
8
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819452900 [0819452904]
Language:
English
Call no.:
P63600/5377.2
Type:
Conference Proceedings

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