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Effect of line-edge roughness (LER) and line-width roughness (LWR) on sub-100-nm device performance

Author(s):
Lee, J.-Y. ( Samsung Electronics Co., Ltd. (South Korea) )
Shin, J. ( Samsung Electronics Co., Ltd. (South Korea) )
Kim, H.-W. ( Samsung Electronics Co., Ltd. (South Korea) )
Woo, S.-G. ( Samsung Electronics Co., Ltd. (South Korea) )
Cho, H.-K. ( Samsung Electronics Co., Ltd. (South Korea) )
Han, W.-S. ( Samsung Electronics Co., Ltd. (South Korea) )
Moon, J.-T. ( Samsung Electronics Co., Ltd. (South Korea) )
2 more
Publication title:
Advances in Resist Technology and Processing XXI
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5376
Pub. Year:
2004
Page(from):
426
Page(to):
433
Pages:
8
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819452894 [0819452890]
Language:
English
Call no.:
P63600/5376.1
Type:
Conference Proceedings

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