IBM-JSR 193-nm negative tone resist: polymer design, material properties, and lithographic performance

IBM-JSR 193-nm negative tone resist: polymer design, material properties, and lithographic performance

Author(s):

Patel, K.S. ( IBM Microelectronics Div. (USA) )

Lawson, M.C. ( IBM Microelectronics Div. (USA) )

Varanasi, P.R. ( IBM Microelectronics Div. (USA) )

Medeiros, D.R. ( IBM Corp. (USA) )

Wallraff, G.M. ( IBM Almaden Research Ctr. (USA) )

Brock, P.J. ( IBM Almaden Research Ctr. (USA) )

DiPietro, R.A. ( IBM Almaden Research Ctr. (USA) )

Nishimura, Y. ( JSR Corp. (Japan) )

Chiba, T. ( JSR Corp. (Japan) )

Slezak, M. ( JSR Micro, Inc. (USA) )

5 more

Publication title:

Advances in Resist Technology and Processing XXI

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5376

Pub. Year:

2004

Page(from):

94

Page(to):

102

Pages:

9

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819452894 [0819452890]

Language:

English

Call no.:

P63600/5376.1

Type:

Conference Proceedings

Details

TDL ID:	ZA00013725
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Advances in resist technology and processing
Conf. info. (Number):	2004 : 21st
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	2004.02.23-2004.02.24

Similar Items:

1 Conference Proceedings "IBM 193-nm bilayer resist: materials, lithographic performance, and optimization" Kwong,R.W., Varanasi,P.R., Lawson,M.C., Hughes,T., Jordhamo,G.M., Khojasteh,M., Mahorowala,A.P., Sooriyakumaran,R., … SPIE-The International Society for Optical Engineering	7 Conference Proceedings High-performance 193-nm photoresist materials based on a new class of polymers containing spaced ester finctionalities Khojasteh, M., Chen, K.R., Kwong, R.W., Lawson, M.C., Varanasi, P.R., Patel, K.S., Kobayashi, E. SPIE-The International Society for Optical Engineering
2 Conference Proceedings 193-nm negative resist based on acid-catalyzed elimination of polar molecules Sooriyakumaran, R., Davis, B.W., Larson, C.E., Brock, P.J., DiPietro, R.A., Wallow, T.I., Connor, E.F., Sundberg, L.K., … SPIE - The International Society of Optical Engineering	8 Conference Proceedings Effect of acid labile ether protecting groups on the oxide etch resistance and lithographic performance of 248-nm resists Varanasi,P.R., Cornett,K.M., Lawson,M.C. SPIE - The International Society for Optical Engineering
3 Conference Proceedings Evolution of a 193-nm bilayer resist for manufacturing Kwong, R.W., Khojasteh, M., Lawson, P., Hughes, T., Varanasi, P.R., Brunsvold, B., Allen, R.D., Brock, P.J., … SPIE-The International Society for Optical Engineering	9 Conference Proceedings Lithographic characteristics of 193-nm resists imaged at 193 and 248 nm Opitz,J., Allen,R.D., Wallow,T.I., Wallraff,G.M., Hofer,D.C. SPIE-The International Society for Optical Engineering
4 Conference Proceedings 193-nm positive-tone bilayer resist based on norbornene-maleic anhydride copolymers Sooriyakumaran,R., Fenzel-Alexander,D., Brock,P.J., Larson,C.E., DiPietro,R.A., Wallraff,G.M., Hofer,D.C., Dawson,D.J., … SPIE - The International Society for Optical Engineering	10 Conference Proceedings 193-nm single-layer positive resists: building etch resistance into a high-resolution imaging system R.D. Allen, G.M. Wallraff, R.A. DiPietro, D.C. Hofer, R.R. Kunz Society of Photo-optical Instrumentation Engineers
5 Conference Proceedings "193-nm single-layer resist materials: total consideration of design, physical properties, and lithographic performances on all major alicyclic platform … Kajita,T., Nishimura,Y., Yamamoto,M., Ishii,H., Soyano,A., Kataoka,A., Slezak,M., Shimizu,M., Varanasi,P.R., … SPIE-The International Society for Optical Engineering	11 Conference Proceedings Rational design in cyclic olefin resists for sub-100-nm lithography Li, W., Varanasi, P.R., Lawson, M.C., Kwong, R.W., Chen, K.-J., Ito, H., Truong, H.D., Allen, R.D., Yamamoto, M., … SPIE-The International Society for Optical Engineering
6 Conference Proceedings Postmodification as a way to improve the lithographic performance of resist materials Li,W., Varanasi,P.R., Lawson,M.C., Hughes,T., Jordhamo,G.M., Allen,R.D., Ito,H. SPIE-The International Society for Optical Engineering	12 Conference Proceedings Limits to etch resistance for 193-nm single-layer resists Kunz,R.R., Palmateer,S.C., Forte,A.R., Allen,R.D., Wallraff,G.M., DiPietro,R.A., Hofer,D.C. SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12