Blank Cover Image

Production control of shallow trench isolation (STI) at the 130-nm node using spectroscopic ellipsometry-based profile metrology

Author(s):
Peters, R.M. ( KLA-Tencor Corp. (USA) )
Chiao, R.H. ( Texas Instruments, Inc. (USA) )
Eckert, T. ( Texas Instruments, Inc. (USA) )
Labra, R. ( Texas Instruments, Inc. (USA) )
Nappa, D. ( Texas Instruments, Inc. (USA) )
Tang, S. ( Texas Instruments, Inc. (USA) )
Washington, J. ( Texas Instruments, Inc. (USA) )
2 more
Publication title:
Metrology, Inspection, and Process Control for Microlithography XVIII
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5375
Pub. Year:
2004
Page(from):
798
Page(to):
806
Pages:
9
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819452887 [0819452882]
Language:
English
Call no.:
P63600/5375.2
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Improved gate process control at the 130-nm node using spectroscopic-ellipsometry-based profile metrology

Hodges, J.S., Lin, Y.-L.C., Burrows, D.R., Chiao, R.H., Peters, R.M., Rangarajan, S., Bhatia, K.N., Lakkapragada, S.

SPIE-The International Society for Optical Engineering
7 Conference Proceedings Capability of spectroscopic ellipsometry-based profile metrology for detecting the profile excursion of polysilicon gate

Yeh, M., Fang, S.-P., Tsau, B.-J., Huang, C.-C., Lin, B.S., Fu, S., Chen, J.C., Freed, R., Dziura, T.G., Slessor, M.D.

SPIE - The International Society of Optical Engineering
2 Conference Proceedings Scatterometry for shallow trench isolation (STI) process metrology

Raymond,C.J., Littau,M.E., Markle,R.J., Purdy,M.A.

SPIE-The International Society for Optical Engineering
8 Conference Proceedings Colloidal Silica based High Selectivity Shallow Trench Isolation (STI) Chemical Mechanical Polishing (CMP) Slurry

Bu, Kyoung-Ho, Moudgil, Brij M.

Materials Research Society
3 Conference Proceedings Improved shallow trench isolation and gate process control using scatterometry based metrology

SPIE - The International Society of Optical Engineering
9 Conference Proceedings The Integration of Shallow Trench Isolation (STI) for High Density DRAM with 0.18 μm Technology and Beyond

Pan, P., McQueen, M., Robinson, K., Sharan, S., Batra, S., Lane, R., Somerville, L., Tran, L.C.

Electrochemical Society
4 Conference Proceedings Spectroscopic Ellipsometry based Scatterometry enabling 193nm Litho and Etch process control for the 110nm technology node and beyond

Hingst, T., Marschner, T., Moert, M., Homilius, J., Guevremont, M., Hopkins, J., Elazami, A.

SPIE-The International Society for Optical Engineering
10 Conference Proceedings Implementation of 248-nm based CD metrology for advanced reticle production

Hourd, A.C., Grimshaw, A., Scheuring, G., Gittinger, C., Doebereiner, S., Hillmann, F., Brueck, H.-J., Hartmann, H., …

SPIE-The International Society for Optical Engineering
5 Conference Proceedings Characterization and optimization of overlay target design for shallow-trench isolation (STI) process

Stephen Hsu, Jason K. Saw, Daniel R. Busath

SPIE - The International Society of Optical Engineering
11 Conference Proceedings Optimization of scatterometry parameters for shallow trench isolation (STI) monitor

Leray, P.J., Cheng, S., Kremer, S., Ercken, M., Pollentier, I.

SPIE - The International Society of Optical Engineering
6 Conference Proceedings Advanced optical imaging platform for CD metrology and defect review on 130-nm to 100-nm node reticles: and overview of preliminary results

Hourd, A.C., Grimshaw, A., Scheuring, G., Gittinger, C., Brueck, H.-J., Chen, S.-B., Chen, P.W., Hartmann, H., …

SPIE-The International Society for Optical Engineering
12 Conference Proceedings Depth profile characterization of hydrogen implanted silicon using spectroscopic ellipsometry

Gubiotti, T., Jacy, D., Hoobler, R.J.

SPIE-The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12