Effects of different processing conditions on line-edge roughness for 193-nm and 157-nm resists
- Author(s):
Ercken, M. ( IMEC (Belgium) ) Leunissen, L.H.A. ( IMEC (Belgium) ) Pollentier, I. ( IMEC (Belgium) ) Patsis, G.P. ( Institute of Microelectronics (Greece) ) Constantoudis, V. ( Institute of Microelectronics (Greece) ) Gogolides, E. ( Institute of Microelectronics (Greece) ) - Publication title:
- Metrology, Inspection, and Process Control for Microlithography XVIII
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 5375
- Pub. Year:
- 2004
- Page(from):
- 266
- Page(to):
- 275
- Pages:
- 10
- Pub. info.:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819452887 [0819452882]
- Language:
- English
- Call no.:
- P63600/5375.1
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Toward a complete description of linewidth roughness: a comparison of different methods for vertical and spatial LER and LWR analysis and CD variation
SPIE - The International Society of Optical Engineering |
7
Conference Proceedings
Fractal dimension of line width roughness and its effects on transistor performance
Society of Photo-optical Instrumentation Engineers |
2
Conference Proceedings
Integrated simulation of line-edge roughness (LER) effects on sub-65 nm transistor operation: from lithography simulation to LER metrology to device operation …
SPIE - The International Society of Optical Engineering |
SPIE-The International Society for Optical Engineering |
3
Conference Proceedings
Simulation of the combined effects of polymer size, acid diffusion length, and EUV secondary electron blur on resist line-edge roughness
SPIE - The International Society of Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
10
Conference Proceedings
Fundamentals of developer-resist interactions for line-edge roughness and critical dimension control in model 248-nm and 157-nm photoresists
SPIE - The International Society of Optical Engineering |
5
Conference Proceedings
Material origins of line-edge roughness: Monte Carlo simulations and scaling analysis
SPIE - The International Society of Optical Engineering |
11
Conference Proceedings
Line-edge roughness in 193-nm resists: lithographic aspects and etch transfer
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society for Optical Engineering |