Quantification of CD-SEM wafer global charging effect on CD and CD uniformity of 193-nm lithography

Quantification of CD-SEM wafer global charging effect on CD and CD uniformity of 193-nm lithography

Author(s):

Ke, C.-M. ( Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan) )

Hung, H.-L. ( Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan) )

Chang, A. ( Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan) )

Chen, J.-H. ( Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan) )

Gau, T.-S. ( Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan) )

Ku, Y.-C. ( Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan) )

Lin, B.J. ( Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan) )

Otaka, T. ( Hitachi High-Technologies Corp. (Japan) )

Ueda, K. ( Hitachi High-Technologies Corp. (Japan) )

Kawada, H. ( Hitachi High-Technologies Corp. (Japan) )

Nomura, H. ( Hitachi High-Technologies Corp. (Japan) )

Ren, N. ( Hitachi High-Technologies Corp. (Japan) )

7 more

Publication title:

Metrology, Inspection, and Process Control for Microlithography XVIII

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5375

Pub. Year:

2004

Page(from):

173

Page(to):

182

Pages:

10

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819452887 [0819452882]

Language:

English

Call no.:

P63600/5375.1

Type:

Conference Proceedings

Details

TDL ID:	ZA00013723
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Metrology, Inspection, and Process Control for Microlithography
Conf. info. (Number):	2004 : 18th
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	2004.02.23-2004.02.26

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