Determination of the flare specification and methods to meet the CD control requirements for the 32-nm node using EUVL
- Author(s):
Chandhok, M. ( Intel Corp. (USA) ) Lee, S.H. ( Intel Corp. (USA) ) Krautschik, C. ( Intel Corp. (USA) ) Rice, B.J. ( Intel Corp. (USA) ) Panning, E. ( Intel Corp. (USA) ) Goldstein, M. ( Intel Corp. (USA) ) Shell, M. ( Intel Corp. (USA) ) - Publication title:
- Emerging Lithographic Technologies VIII
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 5374
- Pub. Year:
- 2004
- Page(from):
- 86
- Page(to):
- 95
- Pages:
- 10
- Pub. info.:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819452870 [0819452874]
- Language:
- English
- Call no.:
- P63600/5374.1
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Implementing flare compensation for EUV masks through localized mask CD resizing
SPIE-The International Society for Optical Engineering |
SPIE - The International Society of Optical Engineering |
2
Conference Proceedings
Comparison of techniques to measure the point spread function due to scatter and flare in EUV lithography systems
SPIE - The International Society of Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE - The International Society of Optical Engineering |
9
Conference Proceedings
Methods for evaluating lithographic performance of exposure tools for the 45-nm node: ECD and scatterometry
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
10
Conference Proceedings
90-nm-node CD uniformity improvement using a controlled gradient temperature CAR PEB process
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE-The International Society for Optical Engineering |