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High-power pulse-current-operated violet light emitting lasers grown on bulk GaN substrates

Author(s):
Perlin, P. ( High Pressure Research Ctr. (Poland) )
Leszczynski, M. ( High Pressure Research Ctr. (Poland) )
Prystawko, P. ( High Pressure Research Ctr. (Poland) )
Czernetzki, R. ( High Pressure Research Ctr. (Poland) )
Wisniewski, P. ( High Pressure Research Ctr. (Poland) )
Weyher, J.L. ( High Pressure Research Ctr. (Poland) )
Nowak, G. ( High Pressure Research Ctr. (Poland) )
Borysiuk, J. ( High Pressure Research Ctr. (Poland) )
Gorczyca, L. ( AGH Univ. of Science and Technology (Poland) )
Swietlik, T. ( High Pressure Research Ctr. (Poland) )
Franssen, G. ( High Pressure Research Ctr. (Poland) )
Bering, A. ( TopGaN Ltd. (Poland) )
Skierbiszewski, C. ( High Pressure Research Ctr. (Poland) )
Grzegory, I. ( High Pressure Research Ctr. (Poland) )
Suski, T. ( High Pressure Research Ctr. (Poland) )
Porowski, S. ( High Pressure Research Ctr. (Poland) )
11 more
Publication title:
Novel In-Plane Semiconductor Lasers III
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5365
Pub. Year:
2004
Page(from):
288
Page(to):
296
Pages:
9
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819452733 [0819452734]
Language:
English
Call no.:
P63600/5365
Type:
Conference Proceedings

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