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Intervalence-band THz laser in selectively-doped semiconductor structure

Author(s):
Publication title:
Novel In-Plane Semiconductor Lasers III
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5365
Pub. Year:
2004
Page(from):
184
Page(to):
193
Pages:
10
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819452733 [0819452734]
Language:
English
Call no.:
P63600/5365
Type:
Conference Proceedings

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