Blank Cover Image

Superluminescent diode at 1.55 um with a bent absorbing guide structure

Author(s):
Kim, J.-H. ( Korea Maritime Univ. (South Korea) )
An, S.-K. ( Korea Maritime Univ. (South Korea) )
Kim, D.-W. ( Korea Maritime Univ. (South Korea) )
You, J.-H. ( Korea Maritime Univ. (South Korea) )
Jung, I.-S. ( Korea Maritime Univ. (South Korea) )
Choi, M.-S. ( Korea Maritime Univ. (South Korea) )
Choi, Y.-K. ( Silla Univ. (South Korea) )
Hong, T.-H. ( Korea Maritime Univ. (South Korea) )
3 more
Publication title:
Integrated Optics: Devices, Materials, and Technologies VIII
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5355
Pub. Year:
2004
Page(from):
190
Page(to):
197
Pages:
8
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819452634 [0819452637]
Language:
English
Call no.:
P63600/5355
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Characteristics of InAs/InGaAsP quantum dot laser diodes lasing at 1.55um

E. Lee, Y. Jang, N. Kim, D. Lee, S. Pyun, D. Ko, J. Yoon, W. Jeong, J. Jang

SPIE - The International Society of Optical Engineering
7 Conference Proceedings Nonlinear optical properties of semiconductor quantum well structures near 1.55 ｦﾌm

Krol,M.F., Hayduk,M.J., Johns,S.T., Teegarden,K.J., Wicks,G.W.

SPIE-The International Society for Optical Engineering
2 Conference Proceedings Design of 1.55-ｦﾌm fully depleted InGaAsP/InP optical thyristors for optical communication systems

Choi,J.-K., Lee,J.-H., Kang,T.-G., Kim,D.-G., Choi,Y.-W.

SPIE - The International Society for Optical Engineering
8 Conference Proceedings Comparison of E-beam and Sputter-Deposited ITO Films for 1.55 um Metal-Semiconductor-Metal Photo-Detector Applications

S. Jang, B. Kang, F. Pen, N. W. Emanetoglu, H. Shen, W. H. Chang, B. Gila, M. Hiad, S. Pearton

Electrochemical Society
3 Conference Proceedings GaAs-based 1.3 um quantum dot laser diode with 3-stacked InAs DWELL (dots-in-a-well) structure and Al0.7Ga0.3As cladding layer [6129-10]

Kim, K W, Cho, N K, Ryu, S. P., Song, J. D., Choi, W. J., Lee, J I, Park, J. H.

SPIE - The International Society of Optical Engineering
9 Conference Proceedings Process Integration of Highly Stable 1.25um2 6T-SRAM Cell with 45 nm Gate Length Triple Gate Transistors

Lee, K., Yang, J. -H., Maeda, S., Jin, Y.- S., Choi, J. -A., Bae, S. -G., Kim, Y. -H., Ahn, J. -H., Sun, M. -C., Ku, J. …

Electrochemical Society
4 Conference Proceedings Strain-tunable photonic bandgap microcavity waveguides in silicon at 1.55um

Wong, C.W., Yang, X., Rakich, P.T., Johnson, S.G., Qi, M., Jeon, Y., Barbastathis, G., Kim, S.-G.

SPIE - The International Society of Optical Engineering
10 Conference Proceedings Dynamic characteristics of the SMH actuator using hydrogen-absorbing alloys [6042-163]

Kim K., Pang D. Y, Choi K. H, Lee S. C, Kim Y. Y, Kwon K. T, Hong C. U, Kim N. G

SPIE - The International Society of Optical Engineering
5 Conference Proceedings Characterization of 1.55um Light Emitting β-FeSi2 Nano-dots and Metallic Silicide Nano-wires

Chou, L.-J., Cheuh, Y.-L, Cheng, S.-L., Ho, H.-F., Chang, M.-T.

Electrochemical Society
11 Conference Proceedings Properties of GaInNAsSb narrow ridge waveguide laser diodes in continuous-wave operation at 1.55um

J. A. Gupta, P. J. Barrios, G. J. Pakulski, G. C. Aers, J. A. Caballero, D. Poitras, X. Wu

SPIE - The International Society of Optical Engineering
6 Conference Proceedings Characteristics of GaInNAsSb/GaAs VCSELs operating near 1.55um

J. A. Gupta, S. Calvez, N. Laurand, J. Weda, D. Burns

Society of Photo-optical Instrumentation Engineers
12 Conference Proceedings InP-based monolithic integration of 1.55-･ｪm MQW laser diode and HBT driver circuit

Li,X.-J., Zhao,F.-H., Zeng,Q.-M., Dong,Y., Li,X., Yang,S.-R., Cai,K.-L., Wang,B.-Z., Ao,J.-P., Liang,C.-G., Liu,S.-Y.

SPIE - The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12