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Optical and electrical properties of interdigitated InGaN/GaN green light-emitting diodes

Author(s):
Lee, J. ( CHTM/Univ. of New Mexico (USA) )
Eliseev, P.G. ( CHTM/Univ. of New Mexico (USA) and P.N. Lebedev Physical Institute (Russia) )
Osinski, M. ( CHTM/Univ. of New Mexico (USA) )
Lee, D.-S. ( Veeco TurboDisc Operations (USA) )
Ramer, J.C. ( Veeco TurboDisc Operations (USA) )
Florescu, D.I. ( Veeco TurboDisc Operations (USA) )
Armour, E.A. ( Veeco TurboDisc Operations (USA) )
2 more
Publication title:
Physics and Simulation of Optoelectronic Devices XII
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5349
Pub. Year:
2004
Page(from):
408
Page(to):
415
Pages:
8
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819452573 [0819452572]
Language:
English
Call no.:
P63600/5349
Type:
Conference Proceedings

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