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Comprehensive analysis of InGaP/GaAs heterojunction bipolar transistors (HBTs) with different thickness of setback layers

Author(s):
Cheng, S.-Y. ( Oriental Institute of Technology (Taiwan) )
Chen, C.-Y. ( National Cheng Kung Univ. (Taiwan) )
Chen, J.-Y. ( National Cheng Kung Univ. (Taiwan) )
Chuang, H.-M. ( National Cheng Kung Univ. (Taiwan) )
Liu, W.-C. ( National Cheng Kung Univ. (Taiwan) )
Chang, W.-L. ( Oriental Institute of Technology (Taiwan) )
Pan, H.-J. ( Oriental Institute of Technology (Taiwan) )
Chen, P.-C. ( Oriental Institute of Technology (Taiwan) )
3 more
Publication title:
Device and process technologies for MEMS, microelectronics, and photonics III : 10-12 December 2003, Perth, Australia
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5276
Pub. Year:
2004
Page(from):
384
Page(to):
391
Pages:
8
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819451699 [081945169X]
Language:
English
Call no.:
P63600/5276
Type:
Conference Proceedings

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