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InGaP/GaAs HBT grown by solid-source molecular-beam epitaxy with a GaP decomposition source

Author(s):
Niu, P.J. ( Tianjin Polytechnic Univ. (China) )
Hu, H. ( Tianjin Polytechnic Univ. (China) )
Shang, X. ( Institute of Physics (China) )
Wu, S. ( Institute of Physics (China) )
Guo, W. ( Tianjin Univ. (China) )
Miao, C ( Tianjin Polytechnic Univ. (China) )
Li, X. ( Tianjin Polytechnic Univ. (China) )
Xu, Z. ( Tianjin Polytechnic Univ. (China) )
Qu, D. ( Tianjin Polytechnic Univ. (China) )
4 more
Publication title:
Microelectronics: Design, Technology, and Packaging
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5274
Pub. Year:
2004
Page(from):
516
Page(to):
522
Pages:
7
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819451675 [0819451673]
Language:
English
Call no.:
P63600/5274
Type:
Conference Proceedings

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