Study of P-type carbon doping on In0.53Ga0.47As, In0.52Al0.2Ga0.28As, and In0.52Al0.48As

Study of P-type carbon doping on In0.53Ga0.47As, In0.52Al0.2Ga0.28As, and In0.52Al0.48As

Author(s):

Yan, J. ( Univ. of Maryland/Baltimore County (USA) )
Ru, G. ( Univ. of Maryland/Baltimore County (USA) )
Gong, Y. ( Univ. of Maryland/Baltimore County (USA) )
Choa, F.-S. ( Univ. of Maryland/Baltimore County (USA) )

Publication title:

Applications of photonic technology 6 : closing the gap between theory, development, and application : Photonics North 2003

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5260

Pub. Year:

2003

Page(from):

446

Page(to):

449

Pages:

4

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819451484 [0819451487]

Language:

English

Call no.:

P63600/5260

Type:

Conference Proceedings

Details

TDL ID:	ZA00013605
Series ID:	PA00000029
Conf. info. (Name):	ICAPT : International Conference on Applications of Photonic Technology : Photonics North
Conf. info. (Number):	2003 : 6th
Conf. info. (Venue):	Montreal, QC, Canada
Conf. info. (Date):	2003.05.25-2003.05.29

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