Influence of the electron-phonon interactions on the transport properties at the molecular scale
- Author(s):
Pecchia, A. ( Univ. degli Studi di Roma (Italy) ) Gheorghe, M. ( Univ. degli Studi di Roma (Italy) ) Carlo, A.D. ( Univ. degli Studi di Roma (Italy) ) Niehaus, T.A. ( Univ. Paderborn (Germany) ) Scholz, R. ( Technishe Univ. Chemnitz (Germany) ) Frauenheim, T. ( Univ. Paderborn (Germany) ) Lugli, P. ( Univ. degli Studi di Roma (Italy) ) - Publication title:
- Nanotubes and Nanowires
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 5219
- Pub. Year:
- 2003
- Page(from):
- 109
- Page(to):
- 116
- Pages:
- 8
- Pub. info.:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819450920 [0819450928]
- Language:
- English
- Call no.:
- P63600/5219
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Density functional tight-binding for self-consistent computation of the transport properties of molecular electronic devices
SPIE - The International Society of Optical Engineering |
Society of Photo-optical Instrumentation Engineers |
2
Conference Proceedings
Phonon Confinement and Electron-Phonon Interactions in Semiconductor Nanostructures
Kluwer Academic Publishers |
Materials Research Society |
SPIE - The International Society for Optical Engineering |
9
Conference Proceedings
Monte Carlo Calculation of High- and Low-Field AlxGa1-x N Electron Transport Characteristics
MRS - Materials Research Society |
4
Conference Proceedings
Phonons,electron-phonon interactions,and phonon-phonon interactions in ?-? nitrides
SPIE - The International Society for Optical Engineering |
10
Conference Proceedings
Monte Carlo simulations of electron transport in bulk GaN and AlGaN-GaN heterostructures
SPIE - The International Society for Optical Engineering |
MRS - Materials Research Society |
SPIE-The International Society for Optical Engineering |
Trans Tech Publications |
12
Conference Proceedings
Effects of Strain Relaxation on the Carrier Transport Properties on InP-based Pseudomorphic High Electron Mobility Structures
Electrochemical Society |