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Interface Properties of 4H-SiC/SiO2 with MOS Capacitors and FETs Annealed in O2, N2O, NO and CO2

Author(s):
Wang, W.
Banerjee, S.
Chow, T.P.
Gutmann, R.J.
Issacs-Smith, T.
Williams, J.
Jones, K.A.
Lelis, A.
Tipton, W.
Scozzie, S.
Agarwal, A.
6 more
Publication title:
Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003
Title of ser.:
Materials science forum
Ser. no.:
457-460
Pub. date:
2004
Page(from):
1309
Page(to):
1312
Pages:
4
Pub. info.:
Uetikon-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878499434 [0878499431]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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